IRF3205ZS |
RFQ for IRF3205ZS Required Field |
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| Technical/Catalog Information | IRF3205ZSPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 66A, 10V |
| Input Capacitance (Ciss) @ Vds | 3450pF @ 25V |
| Power - Max | 170W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3205ZSPBF IRF3205ZSPBF |
| Product | Manufacturers | Pack | D/C |
| IRF3205ZS | - | D2-Pak | `06+(pb-free) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features |
| `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to Tjmax |
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 110 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 78 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 440 | |
| PD @ TC = 25 | Power Dissipation | 170 | W |
| Linear Derating Factor | 1.1 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy | 180 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 250 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
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| IRF0220 | ||
| IRF034 | TO-3 | |
| IRF035 | ||
| IRF044 | TO-3 | |
| IRF044IRF045 | ||
| IRF045 | ||
| IRF054 | 07+ | |
| IRF1010 | ||
| IRF101018 | ||
| IRF1010E | TO-220 | |
| IRF1010EL | TO-262 | |
| IRF1010EPBF | ||
| IRF1104S | D2-Pak | |
| IRF1104SPBF | 07+ | |
| IRF1117 | ||
| IRF111733 | ||
| IRF1010ES | D2-Pak | |
| IRF1010ESPBF | ||
| IRF1010ESTRL | ||
| IRF1010EZ |
